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| Advanced Technical Information CoolMOS Power MOSFET in ISOPLUS247TM Package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Package with Electrically Isolated Base VDSS IXKR 40N60C 600 V ID25 38 A RDS(on) 70 m MOSFET Symbol VDSS VGS ID25 ID90 dv/dt EAS EAR TC = 25C TC = 90C VDS < VDSS; IF 50A;diF/dt 200A/s TVJ = 150C ID = 10 A; L = 36 mH; TC = 25C ID = 20 A; L = 5 H; TC = 25C Conditions TVJ = 25C to 150C Maximum Ratings 600 20 38 25 6 1.8 1 V V A A V/ns ISOPLUS 247TM E153432 G D Isolated base* G = Gate D = Drain S = Source * Patent pending Features J mJ q Symbol Conditions Characteristic Values (TVJ = 25C, unless otherwise specified) min. typ. max. 70 m 3.5 60 5.5 V q ISOPLUS247 package with DCB Base - Electrical isolation towards the heatsink - Low coupling capacitance to the heatsink for reduced EMI - High power dissipation - High temperature cycling capability of chip on DCB - JEDEC TO247AD compatible - Easy clip assembly fast CoolMOS power MOSFET - 2nd generation - High blocking capability - Low on resistance - Avalanche rated for unclamped inductive switching (UIS) - Low thermal resistance due to reduced chip thickness Enhanced total power density RDSon VGSth IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf VF RthJC VGS = 10 V; ID = ID90 VDS = 20 V; ID = 3 mA; VDS = VDSS; VGS = 0 V; TVJ = 25C TVJ = 125C VGS = 20 V; VDS = 0 V VGS= 10 V; VDS = 350 V; ID = 50 A 220 55 125 30 95 100 10 0.9 25 A A 100 nA nC nC nC ns ns ns ns 1.1 V q Applications q q q q q VGS= 10 V; VDS = 380 V; ID = 25 A; RG = 1.8 (reverse conduction) IF = 20 A; VGS = 0 V Switched mode power supplies (SMPS) Uninterruptible power supplies (UPS) Power factor correction (PFC) Welding Inductive heating 0.45 K/W CoolMOS is a trademark of Infineon Technologies AG. IXYS reserves the right to change limits, test conditions and dimensions. (c) 2001 IXYS All rights reserved 1-2 109 IXKR 40N60C Component Symbol VISOL TVJ Tstg TL FC 1.6 mm from case for 10 s mounting force with clip Conditions IISOL 1 mA; 50/60 Hz Maximum Ratings 2500 -40...+150 -40...+125 300 20 ... 120 V~ C C C N ISOPLUS 247 OUTLINE Symbol RthCH Weight Conditions with heatsink compound Characteristic Values min. typ. max. 0.25 6 K/W g 1 Gate, 2 Drain (Collector) 3 Source (Emitter) 4 no connection Dim. A A1 A2 b b1 b2 C D E e L L1 Q R Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 .244 .170 .190 (c) 2001 IXYS All rights reserved 2-2 109 |
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